Інші пропозиції IXTL2N450
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTL2N450 | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 4.5KV 2A 3-Pin(3+Tab) ISOPLUS I5-PAK |
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| IXTL2N450 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Case: ISOPLUS i5-pac™ Mounting: THT Kind of package: tube Drain current: 2A Power dissipation: 220W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Gate charge: 180nC Reverse recovery time: 1.75µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 20Ω кількість в упаковці: 1 шт |
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IXTL2N450 | Виробник : IXYS |
Description: MOSFET N-CH 4500V 2A I5PAK Packaging: Tube Package / Case: ISOPLUSi5-Pak™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 6V @ 250µA Supplier Device Package: ISOPLUSi5-Pak™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
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IXTL2N450 | Виробник : IXYS |
MOSFET 4500V 2A HV Power MOSFET |
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| IXTL2N450 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Case: ISOPLUS i5-pac™ Mounting: THT Kind of package: tube Drain current: 2A Power dissipation: 220W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Gate charge: 180nC Reverse recovery time: 1.75µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 20Ω |
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