IXTN120P20T IXYS
Виробник: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Технічний опис IXTN120P20T IXYS
Description: MOSFET P-CH 200V 106A SOT227B, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції IXTN120P20T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTN120P20T | IXYS |
Discrete Semiconductor Modules TrenchP Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXTN120P20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Case: SOT227B Semiconductor structure: single transistor Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Technology: TrenchP™ Polarisation: unipolar Pulsed drain current: -400A Drain-source voltage: -200V Drain current: -106A Gate-source voltage: ±15V Reverse recovery time: 300ns Gate charge: 740nC On-state resistance: 30mΩ Power dissipation: 830W |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTN120P20T |
|
Виробник: IXYS
Discrete Semiconductor Modules TrenchP Power MOSFET
Discrete Semiconductor Modules TrenchP Power MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTN120P20T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
товару немає в наявності
В кошику
од. на суму грн.