IXTN17N120L Littelfuse Inc.
Виробник: Littelfuse Inc.Description: MOSFET N-CH 1200V 15A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 3711.21 грн |
| 30+ | 3454.65 грн |
| 100+ | 3216.38 грн |
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Технічний опис IXTN17N120L Littelfuse Inc.
Description: MOSFET N-CH 1200V 15A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V.
Інші пропозиції IXTN17N120L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXTN17N120L | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: SOT227B Electrical mounting: screw On-state resistance: 0.9Ω Pulsed drain current: 34A Power dissipation: 540W Technology: Linear™ Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 1.83µs Polarisation: unipolar Gate charge: 155nC кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTN17N120L | Виробник : IXYS |
MOSFET Modules 17 Amps 1200V |
товару немає в наявності |
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IXTN17N120L | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 15A Case: SOT227B Electrical mounting: screw On-state resistance: 0.9Ω Pulsed drain current: 34A Power dissipation: 540W Technology: Linear™ Gate-source voltage: ±40V Mechanical mounting: screw Kind of channel: enhancement Reverse recovery time: 1.83µs Polarisation: unipolar Gate charge: 155nC |
товару немає в наявності |