IXTN500N20X4 IXYS

Description: Ultra Junction X4-Class Power, Power Dissipation (Max): 1150W (Tc), Rds On (Max) @ Id, Vgs: 1.99mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Input Capacitance (Ciss) (Max) @ Vds: 41500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 535 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B - miniBLOC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Packaging: Tube.