IXTN60N50L2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
Description: MOSFET N-CH 500V 53A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3339.81 грн |
10+ | 2865.79 грн |
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Технічний опис IXTN60N50L2 IXYS
Description: MOSFET N-CH 500V 53A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V.
Інші пропозиції IXTN60N50L2 за ціною від 2591.93 грн до 3628.4 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IXTN60N50L2 | Виробник : IXYS | Discrete Semiconductor Modules 60 Amps 500V |
на замовлення 145 шт: термін постачання 322-331 дні (днів) |
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IXTN60N50L2 | Виробник : Littelfuse | Trans MOSFET N-CH 500V 53A 4-Pin SOT-227B |
товар відсутній |
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IXTN60N50L2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Drain current: 53A On-state resistance: 0.1Ω Power dissipation: 735W Type of module: MOSFET transistor Gate charge: 610nC Technology: Linear L2™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 150A Semiconductor structure: single transistor Reverse recovery time: 980ns Drain-source voltage: 500V кількість в упаковці: 1 шт |
товар відсутній |
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IXTN60N50L2 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Drain current: 53A On-state resistance: 0.1Ω Power dissipation: 735W Type of module: MOSFET transistor Gate charge: 610nC Technology: Linear L2™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 150A Semiconductor structure: single transistor Reverse recovery time: 980ns Drain-source voltage: 500V |
товар відсутній |