IXTN660N04T4 IXYS

Description: MOSFET N-CH 40V 660A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 660A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V.