Технічний опис IXTN79N20 IXYS
Description: MOSFET N-CH 200V 85A SOT227B, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Drain to Source Voltage (Vdss): 200 V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 20mA, Power Dissipation (Max): 400W (Tc), Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Packaging: Tube.
Інші пропозиції IXTN79N20
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTN79N20 | IXYS |
Description: MOSFET N-CH 200V 85A SOT227B Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Drain to Source Voltage (Vdss): 200 V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4V @ 20mA Power Dissipation (Max): 400W (Tc) Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTN79N20 | IXYS | MOSFET Modules 79 Amps 200V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTN79N20 |
Виробник: IXYS
Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Description: MOSFET N-CH 200V 85A SOT227B
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 20mA
Power Dissipation (Max): 400W (Tc)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.