IXTN8N150L IXYS
Виробник: IXYS
Description: MOSFET N-CH 1500V 7.5A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 8V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 1500V 7.5A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 8V @ 250µA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3469.15 грн |
10+ | 3037.46 грн |
100+ | 2733.67 грн |
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Технічний опис IXTN8N150L IXYS
Description: MOSFET N-CH 1500V 7.5A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 4A, 20V, Power Dissipation (Max): 545W (Tc), Vgs(th) (Max) @ Id: 8V @ 250µA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V.
Інші пропозиції IXTN8N150L за ціною від 2888.86 грн до 4077.88 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTN8N150L | Виробник : IXYS | Discrete Semiconductor Modules 8 Amps 1500V |
на замовлення 270 шт: термін постачання 21-30 дні (днів) |
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IXTN8N150L | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A Drain-source voltage: 1.5kV Drain current: 7.5A On-state resistance: 3.6Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 250nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 20A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 1.7µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTN8N150L | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A Drain-source voltage: 1.5kV Drain current: 7.5A On-state resistance: 3.6Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 250nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 20A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 1.7µs |
товар відсутній |