| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.40 грн |
| 10+ | 134.17 грн |
| 100+ | 84.91 грн |
| 500+ | 71.11 грн |
| 1000+ | 61.16 грн |
| 2500+ | 58.20 грн |
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Технічний опис IXTP02N50D IXYS
Description: MOSFET N-CH 500V 200MA TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 25µA, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IXTP02N50D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IXTP02N50D |
 N-Channel, Depletion Mode, 500V, 200mA, 30 Ohm, TO-220 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | ||
 |
IXTP02N50D | IXYS |
Description: MOSFET N-CH 500V 200MA TO220AB Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 25µA Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTP02N50D |
|
N-Channel, Depletion Mode, 500V, 200mA, 30 Ohm, TO-220 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IXTP02N50D |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 500V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.