на замовлення 3 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 280.66 грн |
| 10+ | 270.73 грн |
| 50+ | 166.26 грн |
| 100+ | 134.63 грн |
| 500+ | 125.80 грн |
| 1000+ | 122.86 грн |
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Технічний опис IXTP05N100 IXYS
Description: MOSFET N-CH 1000V 750MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Інші пропозиції IXTP05N100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTP05N100 | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 1KV 0.75A 3-Pin(3+Tab) TO-220AB |
товару немає в наявності |
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IXTP05N100 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO220AB On-state resistance: 17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 710ns Features of semiconductor devices: standard power mosfet кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTP05N100 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 750MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
товару немає в наявності |
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IXTP05N100 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.75A Power dissipation: 40W Case: TO220AB On-state resistance: 17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 710ns Features of semiconductor devices: standard power mosfet |
товару немає в наявності |