IXTP05N100 IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Description: MOSFET N-CH 1000V 750MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 188.01 грн |
50+ | 143.63 грн |
100+ | 123.11 грн |
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Технічний опис IXTP05N100 IXYS
Description: MOSFET N-CH 1000V 750MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Інші пропозиції IXTP05N100 за ціною від 91.9 грн до 204.33 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTP05N100 | Виробник : IXYS | MOSFET 0.75 Amps 1000V 15 Rds |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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IXTP05N100 | Виробник : Littelfuse | Trans MOSFET N-CH Si 1KV 0.75A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
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IXTP05N100 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Polarisation: unipolar Power dissipation: 40W Type of transistor: N-MOSFET On-state resistance: 17Ω Drain current: 0.75A Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Reverse recovery time: 710ns Kind of channel: enhanced Case: TO220AB Mounting: THT Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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IXTP05N100 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns Polarisation: unipolar Power dissipation: 40W Type of transistor: N-MOSFET On-state resistance: 17Ω Drain current: 0.75A Features of semiconductor devices: standard power mosfet Drain-source voltage: 1kV Reverse recovery time: 710ns Kind of channel: enhanced Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |