IXTP05N100P IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
кількість в упаковці: 1 шт
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Технічний опис IXTP05N100P IXYS
Description: MOSFET N-CH 1000V 500MA TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V.
Інші пропозиції IXTP05N100P
| Фото | Назва | Виробник | Інформація |
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IXTP05N100P | Виробник : IXYS |
Description: MOSFET N-CH 1000V 500MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V |
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IXTP05N100P | Виробник : IXYS |
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) |
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IXTP05N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.5A Power dissipation: 50W Case: TO220AB On-state resistance: 30Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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