IXTP120N04T2 IXYS
Виробник: IXYS
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис IXTP120N04T2 IXYS
Description: MOSFET N-CH 40V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IXTP120N04T2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTP120N04T2 | IXYS |
MOSFET 120 Amps 40V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTP120N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Reverse recovery time: 35ns Mounting: THT Power dissipation: 200W Gate charge: 58nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 120A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 6.1mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTP120N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
товару немає в наявності
В кошику
од. на суму грн.