| Кількість | Ціна |
|---|---|
| 1+ | 442.23 грн |
| 10+ | 304.90 грн |
| 100+ | 205.35 грн |
| 500+ | 201.13 грн |
| 1000+ | 194.10 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTP12N70X2M IXYS
Description: MOSFET N-CH 700V 12A TO220, Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 Isolated Tab, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 40W (Tc).
Інші пропозиції IXTP12N70X2M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXTP12N70X2M | IXYS |
 Description: MOSFET N-CH 700V 12A TO220Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Isolated Tab Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 40W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTP12N70X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Kind of package: tube Polarisation: unipolar Drain current: 12A Drain-source voltage: 700V Gate charge: 19nC On-state resistance: 0.3Ω Gate-source voltage: ±30V Pulsed drain current: 24A Power dissipation: 40W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTP12N70X2M |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 12A TO220
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Description: MOSFET N-CH 700V 12A TO220
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IXTP12N70X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.