IXTP14N60PM IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
кількість в упаковці: 1 шт
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Технічний опис IXTP14N60PM IXYS
Description: MOSFET N-CH 600V 7A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Інші пропозиції IXTP14N60PM
| Фото | Назва | Виробник | Інформація |
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IXTP14N60PM | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 600V 7A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
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IXTP14N60PM | Виробник : IXYS |
MOSFETs TO220 600V 7A N-CH POLAR |
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IXTP14N60PM | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 36nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |