Технічний опис IXTP160N04T2 Littelfuse
Description: MOSFET N-CH 40V 160A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V.
Інші пропозиції IXTP160N04T2
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IXTP160N04T2 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO220AB On-state resistance: 5mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns кількість в упаковці: 1 шт |
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IXTP160N04T2 | Виробник : IXYS |
Description: MOSFET N-CH 40V 160A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V |
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IXTP160N04T2 | Виробник : IXYS |
MOSFET 160 Amps 40V |
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IXTP160N04T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO220AB On-state resistance: 5mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
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