IXTP170N075T2 Ixys Corporation
| Кількість | Ціна без ПДВ |
|---|---|
| 54+ | 262.90 грн |
| 55+ | 260.68 грн |
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Технічний опис IXTP170N075T2 Ixys Corporation
Description: MOSFET N-CH 75V 170A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IXTP170N075T2 за ціною від 146.88 грн до 348.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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IXTP170N075T2 | Littelfuse Inc. |
 Description: MOSFET N-CH 75V 170A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 326 шт: термін постачання 21-31 дні (днів) |
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IXTP170N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 360W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 109nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 63ns |
на замовлення 283 шт: термін постачання 14-30 дні (днів) |
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IXTP170N075T2 | IXYS |
MOSFETs 170 Amps 75V |
на замовлення 322 шт: термін постачання 21-30 дні (днів) |
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| IXTP170N075T2 |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 75V 170A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 75V 170A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.98 грн |
| 50+ | 161.78 грн |
| 100+ | 146.88 грн |
| IXTP170N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.98 грн |
| 10+ | 170.25 грн |
| 50+ | 169.41 грн |
| IXTP170N075T2 |
|
Виробник: IXYS
MOSFETs 170 Amps 75V
MOSFETs 170 Amps 75V
на замовлення 322 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 348.71 грн |
| 10+ | 178.67 грн |
| 100+ | 151.89 грн |