IXTP1R4N100P IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 1000V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
50+ | 157.55 грн |
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Технічний опис IXTP1R4N100P IXYS
Description: MOSFET N-CH 1000V 1.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Інші пропозиції IXTP1R4N100P за ціною від 112.16 грн до 216.53 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTP1R4N100P | Виробник : IXYS | MOSFET 1.4 Amps 1000V 11 Rds |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTP1R4N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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IXTP1R4N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: THT Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTP1R4N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: THT Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
товар відсутній |