| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.58 грн |
| 10+ | 209.59 грн |
| 50+ | 154.64 грн |
| 100+ | 137.38 грн |
| 250+ | 129.78 грн |
| 500+ | 118.74 грн |
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Технічний опис IXTP1R6N50D2 IXYS
Description: MOSFET N-CH 500V 1.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Інші пропозиції IXTP1R6N50D2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTP1R6N50D2 | Littelfuse Inc. |
 Description: MOSFET N-CH 500V 1.6A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTP1R6N50D2 |
|
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 500V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.