IXTP20N65X2M Littelfuse Inc.
Виробник: Littelfuse Inc.Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 300+ | 177.46 грн |
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Технічний опис IXTP20N65X2M Littelfuse Inc.
Description: MOSFET N-CH 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V.
Інші пропозиції IXTP20N65X2M
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXTP20N65X2M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Features of semiconductor devices: ultra junction x-class Gate charge: 27nC кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTP20N65X2M | Виробник : IXYS |
MOSFETs TO220 650V 20A N-CH X2CLASS |
товару немає в наявності |
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IXTP20N65X2M | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP On-state resistance: 0.185Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.35µs Features of semiconductor devices: ultra junction x-class Gate charge: 27nC |
товару немає в наявності |