
IXTP270N04T4 IXYS

Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 324.88 грн |
50+ | 175.05 грн |
100+ | 161.05 грн |
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Технічний опис IXTP270N04T4 IXYS
Description: MOSFET N-CH 40V 270A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V.
Інші пропозиції IXTP270N04T4
Фото | Назва | Виробник | Інформація |
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Ціна |
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IXTP270N04T4 | Виробник : Littelfuse |
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товару немає в наявності |
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IXTP270N04T4 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Mounting: THT Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Case: TO220AB Reverse recovery time: 48ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTP270N04T4 | Виробник : IXYS |
![]() |
товару немає в наявності |
|
![]() |
IXTP270N04T4 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Mounting: THT Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Case: TO220AB Reverse recovery time: 48ns |
товару немає в наявності |