IXTP2N100 IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO220AB
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.50 грн |
| 10+ | 359.20 грн |
| 100+ | 294.31 грн |
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Технічний опис IXTP2N100 IXYS
Description: MOSFET N-CH 1000V 2A TO220AB, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA.
