IXTP2N100P IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 226.04 грн |
50+ | 172.38 грн |
100+ | 147.76 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTP2N100P IXYS
Description: MOSFET N-CH 1000V 2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V.
Інші пропозиції IXTP2N100P за ціною від 147.54 грн до 245.35 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTP2N100P | Виробник : IXYS | MOSFET 2 Amps 1000V 7.5 Rds |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTP2N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 |
товар відсутній |
||||||||||||
IXTP2N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
IXTP2N100P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
товар відсутній |