Технічний опис IXTP32N65X IXYS
Description: MOSFET N-CH 650V 32A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V.
Інші пропозиції IXTP32N65X
| Фото | Назва | Виробник | Інформація |
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IXTP32N65X | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO220AB On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTP32N65X | Виробник : IXYS |
Description: MOSFET N-CH 650V 32A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V |
товару немає в наявності |
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IXTP32N65X | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO220AB On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
товару немає в наявності |