Технічний опис IXTP32N65XM IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 32A, Power dissipation: 78W, Case: TO220FP, On-state resistance: 135mΩ, Mounting: THT, Gate charge: 54nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ultra junction x-class, Reverse recovery time: 400ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTP32N65XM
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IXTP32N65XM | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 78W Case: TO220FP On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns кількість в упаковці: 1 шт |
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IXTP32N65XM | Виробник : IXYS |
MOSFET 650V/9A Power MOSFET |
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IXTP32N65XM | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 78W; TO220FP; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 78W Case: TO220FP On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 400ns |
товар відсутній |