на замовлення 53 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 466.18 грн |
| 10+ | 412.87 грн |
| 100+ | 270.22 грн |
| 250+ | 261.80 грн |
| 500+ | 235.77 грн |
| 1000+ | 196.73 грн |
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Технічний опис IXTP340N04T4 IXYS
Description: MOSFET N-CH 40V 340A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V.
Інші пропозиції IXTP340N04T4
| Фото | Назва | Виробник | Інформація |
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IXTP340N04T4 | Виробник : IXYS |
 Description: MOSFET N-CH 40V 340A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V |
товару немає в наявності |
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IXTP340N04T4 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 480W Case: TO220AB On-state resistance: 1.9mΩ Mounting: THT Gate charge: 256nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 43ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |