IXTP80N12T2 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Reverse recovery time: 90ns
Drain-source voltage: 120V
Drain current: 80A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
кількість в упаковці: 1 шт
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Технічний опис IXTP80N12T2 IXYS
Description: MOSFET N-CH 120V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V.
Інші пропозиції IXTP80N12T2
| Фото | Назва | Виробник | Інформація |
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IXTP80N12T2 | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 120V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V |
товару немає в наявності |
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IXTP80N12T2 | Виробник : IXYS |
MOSFETs TO220 120V 80A N-CH TRENCH |
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IXTP80N12T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Kind of package: tube Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 90ns Drain-source voltage: 120V Drain current: 80A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 325W |
товару немає в наявності |