IXTQ130N20T Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 200V 130A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Технічний опис IXTQ130N20T Littelfuse Inc.
Description: MOSFET N-CH 200V 130A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 65A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції IXTQ130N20T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTQ130N20T | Виробник : IXYS |
MOSFETs TO3P 200V 130A N-CH TRENCH |
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