IXTQ180N055T IXYS

Description: MOSFET N-CH 55V 180A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.