IXTQ180N055T IXYS
Виробник: IXYS
Description: MOSFET N-CH 55V 180A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET N-CH 55V 180A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
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Технічний опис IXTQ180N055T IXYS
Description: MOSFET N-CH 55V 180A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V.
Інші пропозиції IXTQ180N055T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXTQ180N055T | Виробник : IXYS |
 MOSFET 180 Amps 55V 0.004 Ohm Rds |
товару немає в наявності |