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IXTQ18N60P Littelfuse

Name: IXTQ18N60P
Brand: IXYS
SKU: 453793611-1
Price: 247.85 UAH
Availability: BackOrder

rete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf

Виробник: Littelfuse
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-3P

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Технічний опис IXTQ18N60P Littelfuse

Description: MOSFET N-CH 600V 18A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.

Інші пропозиції IXTQ18N60P

Назва	Виробник	Інформація	Доступність
IXTQ18N60P	Виробник : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs кількість в упаковці: 1 шт	товар відсутній
IXTQ18N60P	Виробник : IXYS	Description: MOSFET N-CH 600V 18A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V	товар відсутній
IXTQ18N60P	Виробник : IXYS	MOSFET 18.0 Amps 600 V 0.42 Ohm Rds	товар відсутній
IXTQ18N60P	Виробник : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs	товар відсутній