IXTQ30N60L2 Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1369.59 грн |
| 30+ | 1056.47 грн |
| 120+ | 807.53 грн |
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Технічний опис IXTQ30N60L2 Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Інші пропозиції IXTQ30N60L2 за ціною від 937.99 грн до 1627.33 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
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IXTQ30N60L2 | Виробник : IXYS |
 MOSFETs 30 Amps 600V |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXTQ30N60L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 335nC Reverse recovery time: 710ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTQ30N60L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO3P On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 335nC Reverse recovery time: 710ns |
товару немає в наявності |