IXTQ3N150M Littelfuse


media.pdf Виробник: Littelfuse
High Voltage Power MOSFET
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Технічний опис IXTQ3N150M Littelfuse

Description: MOSFET N-CH 1500V 1.83A TO3PFP, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc), Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PFP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V.

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IXTQ3N150M IXTQ3N150M Виробник : IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Mounting: THT
Reverse recovery time: 900ns
Power dissipation: 73W
Features of semiconductor devices: standard power mosfet
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38.6nC
кількість в упаковці: 1 шт
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IXTQ3N150M Виробник : IXYS media?resourcetype=datasheets&itemid=c6db860a-1248-4c1d-a54c-876cdbca4ff5&filename=littelfuse_discrete_mosfets_n-channel_standard_ixtq3n150m_datasheet.pdf Description: MOSFET N-CH 1500V 1.83A TO3PFP
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PFP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
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IXTQ3N150M Виробник : IXYS media-3322806.pdf MOSFET MSFT N-CH STD-HI VOLTAGE
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IXTQ3N150M IXTQ3N150M Виробник : IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Mounting: THT
Reverse recovery time: 900ns
Power dissipation: 73W
Features of semiconductor devices: standard power mosfet
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38.6nC
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