на замовлення 250 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 879.75 грн |
| 10+ | 763.97 грн |
| 30+ | 646.66 грн |
| 60+ | 610.62 грн |
| 120+ | 501.74 грн |
| 270+ | 501.00 грн |
| 510+ | 496.59 грн |
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Технічний опис IXTQ44N50P IXYS
Description: MOSFET N-CH 500V 44A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V, Power Dissipation (Max): 658W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V.
Інші пропозиції IXTQ44N50P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTQ44N50P | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Drain-source voltage: 500V Drain current: 44A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 650W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 98nC Kind of channel: enhancement Mounting: THT Case: TO3P Reverse recovery time: 400ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTQ44N50P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 500V 44A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V Power Dissipation (Max): 658W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V |
товару немає в наявності |
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IXTQ44N50P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Drain-source voltage: 500V Drain current: 44A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 650W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 98nC Kind of channel: enhancement Mounting: THT Case: TO3P Reverse recovery time: 400ns |
товару немає в наявності |