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Технічний опис IXTQ44N50P IXYS
Description: MOSFET N-CH 500V 44A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 658W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції IXTQ44N50P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTQ44N50P | IXYS |
 Description: MOSFET N-CH 500V 44A TO3PInput Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 658W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
 |
IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXTQ44N50P | Littelfuse |
Trans MOSFET N-CH 500V 44A 3-Pin(3+Tab) TO-3P |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| IXTQ44N50P |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 500V 44A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTQ44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику
од. на суму грн.
| IXTQ44N50P |
|
Виробник: Littelfuse
Trans MOSFET N-CH 500V 44A 3-Pin(3+Tab) TO-3P
Trans MOSFET N-CH 500V 44A 3-Pin(3+Tab) TO-3P
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.