IXTQ69N30P IXYS
Виробник: IXYS
Description: MOSFET N-CH 300V 69A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
Description: MOSFET N-CH 300V 69A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 772.23 грн |
10+ | 671.69 грн |
100+ | 556.14 грн |
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Технічний опис IXTQ69N30P IXYS
Description: MOSFET N-CH 300V 69A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V.
Інші пропозиції IXTQ69N30P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXTQ69N30P Код товару: 132595 |
Транзистори > Польові N-канальні |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns Kind of package: tube Reverse recovery time: 330ns Drain-source voltage: 300V Drain current: 69A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 156nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P кількість в упаковці: 1 шт |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns Kind of package: tube Reverse recovery time: 330ns Drain-source voltage: 300V Drain current: 69A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 156nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P |
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