на замовлення 439 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 454.07 грн |
| 10+ | 324.96 грн |
| 120+ | 236.87 грн |
| 510+ | 218.59 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTQ75N10P IXYS
Description: MOSFET N-CH 100V 75A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Інші пропозиції IXTQ75N10P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXTQ75N10P | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
IXTQ75N10P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 100V 75A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
товару немає в наявності |
|
|
|
IXTQ75N10P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Technology: PolarHT™ |
товару немає в наявності |