IXTQ75N10P IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 1053 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 370.82 грн |
10+ | 320.9 грн |
100+ | 262.9 грн |
500+ | 210.03 грн |
1000+ | 177.14 грн |
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Технічний опис IXTQ75N10P IXYS
Description: MOSFET N-CH 100V 75A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Інші пропозиції IXTQ75N10P за ціною від 179.66 грн до 420.75 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXTQ75N10P | Виробник : IXYS | MOSFET 75 Amps 100V 0.025 Rds |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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IXTQ75N10P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTQ75N10P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |