Технічний опис IXTR120P20T Littelfuse
Description: MOSFET P-CH 200V 90A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V.
Інші пропозиції IXTR120P20T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXTR120P20T | Виробник : IXYS |
 IXTR120P20T THT P channel transistors |
товару немає в наявності |
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IXTR120P20T | Виробник : IXYS |
Description: MOSFET P-CH 200V 90A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V |
товару немає в наявності |
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IXTR120P20T | Виробник : IXYS |
MOSFETs TrenchP Power MOSFET |
товару немає в наявності |