Технічний опис IXTR120P20T Littelfuse
Description: MOSFET P-CH 200V 90A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V.
Інші пропозиції IXTR120P20T
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IXTR120P20T | Виробник : IXYS |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 595W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 32mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXTR120P20T | Виробник : IXYS |
Description: MOSFET P-CH 200V 90A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V |
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IXTR120P20T | Виробник : IXYS |
MOSFET TrenchP Power MOSFET |
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IXTR120P20T | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 595W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 32mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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