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IXTR210P10T IXYS
Виробник: IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 300+ | 1764.16 грн |
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Технічний опис IXTR210P10T IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 595W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IXTR210P10T за ціною від 1875.02 грн до 2503.33 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTR210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Technology: TrenchP™ Polarisation: unipolar Drain current: -195A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 8mΩ Gate-source voltage: ±15V Power dissipation: 390W Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| IXTR210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2503.33 грн |
| 3+ | 2056.18 грн |
| 10+ | 1875.02 грн |