Технічний опис IXTT100N25P IXYS
Description: MOSFET N-CH 250V 100A TO268, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Інші пропозиції IXTT100N25P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXTT100N25P |
 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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IXTT100N25P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 250V 100A TO268 Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
товару немає в наявності |