Технічний опис IXTT10N100D Littelfuse
Description: MOSFET N-CH 1000V 10A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Інші пропозиції IXTT10N100D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTT10N100D | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Pulsed drain current: 20A Power dissipation: 400W Case: TO268 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 850ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXTT10N100D | Виробник : IXYS |
Description: MOSFET N-CH 1000V 10A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V FET Feature: Depletion Mode Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товар відсутній |
|
 |
IXTT10N100D | Виробник : IXYS |
MOSFET 10 Amps 1000V 1.4 Rds |
товар відсутній |
|
|
|
IXTT10N100D | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Pulsed drain current: 20A Power dissipation: 400W Case: TO268 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 850ns |
товар відсутній |