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IXTT10N100D

IXTT10N100D IXYS

littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
FET Feature: Depletion Mode
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Технічний опис IXTT10N100D IXYS

Description: MOSFET N-CH 1000V 10A TO268, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 400W (Tc), FET Feature: Depletion Mode, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.

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IXTT10N100D IXTT10N100D IXYS media-3323092.pdf MOSFETs 10 Amps 1000V 1.4 Rds
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IXTT10N100D IXTT10N100D IXYS IXTH(T)10N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
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IXTT10N100D media-3323092.pdf
IXTT10N100D
Виробник: IXYS
MOSFETs 10 Amps 1000V 1.4 Rds
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В кошику  од. на суму  грн.
IXTT10N100D IXTH(T)10N100D.pdf
IXTT10N100D
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
товару немає в наявності
В кошику  од. на суму  грн.