Технічний опис IXTT110N10P Littelfuse
Description: MOSFET N-CH 100V 110A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V.
Інші пропозиції IXTT110N10P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTT110N10P | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXTT110N10P | Виробник : IXYS |
Description: MOSFET N-CH 100V 110A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V |
товар відсутній |
|
 |
IXTT110N10P | Виробник : IXYS |
MOSFET 110 Amps 100V 0.015 Rds |
товар відсутній |
|
|
|
IXTT110N10P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
товар відсутній |