Технічний опис IXTT11P50 Littelfuse
Description: MOSFET P-CH 500V 11A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Інші пропозиції IXTT11P50
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IXTT11P50 | Виробник : IXYS |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs кількість в упаковці: 1 шт |
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IXTT11P50 | Виробник : IXYS |
Description: MOSFET P-CH 500V 11A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
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IXTT11P50 | Виробник : IXYS |
MOSFET 11 Amps 500V 0.75 Rds |
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IXTT11P50 | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs |
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