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Технічний опис IXTT12N150HV IXYS
Description: MOSFET N-CH 1500V 12A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.
Інші пропозиції IXTT12N150HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXTT12N150HV | Виробник : Littelfuse Inc. |
 Description: MOSFET N-CH 1500V 12A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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IXTT12N150HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 12A Power dissipation: 890W Case: TO268HV Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.2µs |
товару немає в наявності |