IXTT140N10P IXYS
Виробник: IXYS
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 702.74 грн |
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Технічний опис IXTT140N10P IXYS
Description: MOSFET N-CH 100V 140A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Інші пропозиції IXTT140N10P за ціною від 394.57 грн до 757.92 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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IXTT140N10P | Виробник : IXYS | MOSFET 140 Amps 100V 0.011 Rds |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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IXTT140N10P | Виробник : Littelfuse | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268 |
товар відсутній |
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IXTT140N10P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTT140N10P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
товар відсутній |