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IXTT16N50D2

IXTT16N50D2 IXYS


media-3321429.pdf Виробник: IXYS
MOSFET D2 Depletion Mode Power MOSFETs
на замовлення 300 шт:

термін постачання 524-533 дні (днів)
Кількість Ціна без ПДВ
1+1496.23 грн
10+ 1360.46 грн
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Технічний опис IXTT16N50D2 IXYS

Description: MOSFET N-CH 500V 16A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V.

Інші пропозиції IXTT16N50D2

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Ціна без ПДВ
IXTT16N50D2 IXTT16N50D2 Виробник : IXYS IXTH(T)16N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
IXTT16N50D2 IXTT16N50D2 Виробник : IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
товар відсутній
IXTT16N50D2 IXTT16N50D2 Виробник : IXYS IXTH(T)16N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 130ns
товар відсутній