IXTT170N10P IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 953.05 грн |
| 3+ | 636.52 грн |
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Технічний опис IXTT170N10P IXYS
Description: MOSFET N-CH 100V 170A TO268, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 715W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V.
Інші пропозиції IXTT170N10P за ціною від 512.30 грн до 1018.94 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTT170N10P | Littelfuse Inc. |
Description: MOSFET N-CH 100V 170A TO268 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V |
на замовлення 281 шт: термін постачання 21-31 дні (днів) |
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| IXTT170N10P |
|
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1018.94 грн |
| 30+ | 596.53 грн |
| 120+ | 512.30 грн |