IXTT1N250HV IXYS
Виробник: IXYS
Description: MOSFET N-CH 2500V 1.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 2500V 1.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3105.36 грн |
10+ | 2664.61 грн |
100+ | 2338.88 грн |
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Технічний опис IXTT1N250HV IXYS
Description: MOSFET N-CH 2500V 1.5A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 2500 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V.
Інші пропозиції IXTT1N250HV
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTT1N250HV | Виробник : IXYS | MOSFET MSFT N-CH STD-VERY HI VOLTAGE |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTT1N250HV | Виробник : Littelfuse | Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV |
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IXTT1N250HV | Виробник : Littelfuse | Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV |
товар відсутній |
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IXTT1N250HV | Виробник : Littelfuse | Trans MOSFET N-CH 2.5KV 1.5A 3-Pin(2+Tab) D3PAK-HV |
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IXTT1N250HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 250W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: SMD Gate charge: 41nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.5µs кількість в упаковці: 1 шт |
товар відсутній |
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IXTT1N250HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 250W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: SMD Gate charge: 41nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 2.5µs |
товар відсутній |