на замовлення 170 шт:
термін постачання 413-422 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2823.34 грн |
| 10+ | 2593.85 грн |
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Технічний опис IXTT1N300P3HV IXYS
Description: MOSFET N-CH 3000V 1A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V.
Інші пропозиції IXTT1N300P3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTT1N300P3HV | Виробник : Littelfuse |
 Trans MOSFET N-CH 3KV 1A |
товар відсутній |
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IXTT1N300P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us Case: TO268HV Mounting: SMD On-state resistance: 50Ω Reverse recovery time: 1.8µs Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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IXTT1N300P3HV | Виробник : IXYS |
Description: MOSFET N-CH 3000V 1A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268HV (IXTT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 3000 V Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V |
товар відсутній |
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IXTT1N300P3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us Case: TO268HV Mounting: SMD On-state resistance: 50Ω Reverse recovery time: 1.8µs Power dissipation: 195W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 1A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube |
товар відсутній |