Технічний опис IXTT20N50D Littelfuse
Description: MOSFET N-CH 500V 20A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Інші пропозиції IXTT20N50D
Фото | Назва | Виробник | Інформація |
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IXTT20N50D | Виробник : Ixys Corporation | Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D3PAK |
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IXTT20N50D | Виробник : IXYS |
Description: MOSFET N-CH 500V 20A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V FET Feature: Depletion Mode Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
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IXTT20N50D | Виробник : IXYS | MOSFET 20 Amps 500V 0.33 Rds |
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