IXTT20P50P IXYS

Description: MOSFET P-CH 500V 20A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V.