IXTT30N50L IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
кількість в упаковці: 1 шт
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Технічний опис IXTT30N50L IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns, Mounting: SMD, Polarisation: unipolar, Kind of package: tube, Case: TO268, Gate charge: 240nC, Kind of channel: enhanced, Reverse recovery time: 0.5µs, Drain-source voltage: 500V, Drain current: 30A, On-state resistance: 0.2Ω, Type of transistor: N-MOSFET, Power dissipation: 400W, Features of semiconductor devices: linear power mosfet, кількість в упаковці: 1 шт.
Інші пропозиції IXTT30N50L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTT30N50L | Виробник : IXYS | Description: MOSFET N-CH 500V 30A TO-268 |
товар відсутній |
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IXTT30N50L | Виробник : IXYS | MOSFET 30 Amps 500V |
товар відсутній |
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IXTT30N50L | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
товар відсутній |