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IXTT30N50L2 Littelfuse

Name: IXTT30N50L2
Brand: IXYS
SKU: 453793696-1
Price: 902.95 UAH
Availability: BackOrder

iscrete_mosfets_n-channel_linear_ixt_30n50_datasheet.pdf.pdf

Виробник: Littelfuse
Trans MOSFET N-CH 500V 30A 3-Pin(2+Tab) TO-268

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Технічний опис IXTT30N50L2 Littelfuse

Description: MOSFET N-CH 500V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V.

Інші пропозиції IXTT30N50L2

Назва	Виробник	Інформація	Доступність
IXTT30N50L2	Виробник : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet кількість в упаковці: 1 шт	товар відсутній
IXTT30N50L2	Виробник : IXYS	Description: MOSFET N-CH 500V 30A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V	товар відсутній
IXTT30N50L2	Виробник : IXYS	MOSFET LINEAR L2 SERIES MOSFET 500V 30A	товар відсутній
IXTT30N50L2	Виробник : IXYS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet	товар відсутній